At 12.7% CAGR, North America RF Power Amplifier Market is Projected to be Worth US$ 4,091.90 Million by 2031, says Business Market Insights

According to Business Market Insights' research, the North America RF power amplifier market was valued at US$ 1,577.69 million in 2023 and is projected to reach US$ 4,091.90 million by 2031, registering a CAGR of 12.7% from 2023 to 2031. Advancements in gallium nitride, gallium arsenide (GaAs), complementary metal-oxide-semiconductors (CMOS) and miniaturization of RF power amplifiers are among the critical factors attributed to drive the North America RF power amplifier market growth.

GaAs, gallium nitride (GAN), and complementary metal-oxide-semiconductor (CMOS) components offer energy-efficient and compact solutions for RF power amplifiers, making them highly suitable for various applications. Gallium nitride (GAN) is well-suited for high-power and high-temperature microwave applications due to its high breakdown voltages, high electron mobility, and saturation velocity. It is ideal for RF power amplifiers used in high-speed wireless data transmission, power grids, and microwave ovens. GAN-based RF transistors are known for their ability to maintain performance at higher temperatures compared to silicon transistors, which enhances their reliability and efficiency. Gallium arsenide (GaAs) is another compound semiconductor that is widely used in RF power amplifiers. GaAs power amplifiers are commonly used in cell phones and cover various frequency ranges. They offer high power levels and are designed for maximum power-added efficiencies. Complementary metal-oxide-semiconductor (CMOS) technology is also emerging as a promising option for RF power amplifiers. CMOS-based RF power amplifiers offer advantages such as low power consumption, small form factor, and integration with other CMOS components. These characteristics make CMOS-based RF power amplifiers suitable for applications where power efficiency and compactness are crucial. The adoption of GaAs, GAN, and CMOS components in RF power amplifiers is driven by the need for energy-efficient and compact solutions. Companies are collaborating for the development of these technologies; for instance, in May 2022, STMicroelectronics and MACOM Technology Solutions Holdings Inc. achieved a significant milestone by successfully creating prototypes of radio-frequency gallium-nitride-on silicon (RF GAN-on-Si) technology. These emerging technologies are expected to continue driving the growth of the North America RF power amplifier market, enabling advancements in wireless communication, data centers, and other industries.

On the contrary, high manufacturing costs and complex design hamper the growth of North America RF power amplifier market.

Based on frequency, the North America RF power amplifier market is segmented into less than 10 GHz, 11-20 GHz, 21-30 GHz, and above 30 GHz. The less than 10GHz segment held 56.9% market share in 2023, amassing US$ 897.82 million. It is projected to garner US$ 2,423.29 million by 2031 to register 13.2% CAGR during 2023-2031.

In terms of technology, the North America RF power amplifier market is segmented into galium arsenide (GaAs), galium nitride (GaN), silicon germanium (SiGe), and others. The galium arsenide (GaAs) segment held 50.7% share of North America RF power amplifier market in 2023, amassing US$ 799.43 million. It is projected to garner US$ 1,966.36 million by 2031 to expand at 11.9% CAGR from 2023 to 2031.

By application, the North America RF power amplifier market is categorized into consumer electronics, aerospace and defense, automotive, medical, and others. The consumer electronics segment held 41.9% share of North America RF power amplifier market in 2023, amassing US$ 661.18 million. It is predicted to garner US$ 1,670.03 million by 2031 to expand at 12.3% CAGR between 2023 and 2031.

Based on country, the North America RF power amplifier market is categorized into the US, Canada, and Mexico. Our regional analysis states that the US captured 77.7% share of North America RF power amplifier market in 2023. It was assessed at US$ 1,225.87 million in 2023 and is likely to hit US$ 3,215.74 million by 2031, registering a CAGR of 12.8% during 2023-2031.

Key players operating in the North America RF power amplifier market are Qorvo Inc, NXP Semiconductors NV, Qualcomm Inc, Infineon Technologies AG, Broadcom Inc, Mitsubishi Electric Corp, STMicroelectronics NV, Skyworks Solutions Inc, Texas Instruments Inc, and Analog Devices Inc., among others.

• In September 2023, Qorvo introduced the world's highest power Ku-Band satellite communications amplifier, QPA0017 is the world's highest-power Ku-Band satellite communications amplifier in a highly compact 7.5 x 6 mm SMT package. It targets the 13.75 to 14.5 GHz satcom band while providing 12 Watts of linear power with third-order intermodulation distortion products of 25 dBc. The device can deliver up to 25 Watts of saturated output power with 35% power-added efficiency and provides an outstanding combination of high RF power and power-added efficiency throughput ground and mobile terminals.
• In June 2023, NXP Semiconductors NV announced a family of top-side cooled RF amplifier modules to enable thinner and lighter radios for 5G infrastructure. The top-side cooled RF amplifier modules deliver significant design and manufacturing benefits to the user, including the removal of the dedicated RF shield, the use of a cost-effective and streamlined printed circuit board, and the separation of thermal management from RF design.

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