At 14.1% CAGR, Middle East & Africa 3D Stacking Market is Projected to be Worth US$ 301.83 Million by 2031, says Business Market Insights

According to Business Market Insights' research, the Middle East & Africa 3D stacking market was valued at US$ 104.90 million in 2023 and is expected to reach US$ 301.83 million by 2031, recording a CAGR of 14.1% from 2023 to 2031. Rising demand for consumer electronics and surge in demand for high-bandwidth memory are among the critical factors attributed to driving the Middle East & Africa 3D stacking market growth.

The proliferating demand for sleek, feature-rich, and power-efficient gadgets such as smartphones, tablets, smartwatches, and portable devices has led to immense pressure on manufacturers to deliver compact, high-performance solutions. For instance, according to estimates, the preliminary shipment of smartphones was 328 million units in the fourth quarter of 2023. This represents 8.6% gain over 4Q22, establishing 4Q23 as the first quarter to show major growth from 2Q21. Consumers across the globe are highly adopting smartphones for shopping, communication, entertainment, and other purposes. These devices use 3D stacked die packaging, which is revolutionizing their designs and functionality. 3D stacked die packaging is capable of significantly reducing form factors without compromising performance. By vertically stacking multiple layers of integrated circuits, this technology allows for the smooth integration of diverse components within a compact space. This consolidation not only streamlines the design and assembly processes but also enables manufacturers to create thin, more aesthetically appealing devices that align with the evolving preferences of consumers.

On the contrary, complexity associated with 3D stacking technology hampers the growth of Middle East & Africa 3D stacking market.

Based on interconnecting technology, the Middle East & Africa 3D stacking market is segmented into through-silicon via, monolithic 3D integration, and 3D hybrid bonding. The through-silicon via segment held 45.3% market share in 2023, amassing US$ 47.57 million. It is projected to garner US$ 152.45 million by 2031 to register 15.7% CAGR during 2023-2031.

In terms of device type, the Middle East & Africa 3D stacking market is segmented into memory devices, mems/sensors, LEDs, imaging & optoelectronics, and others. The memory devices segment held 30.5% share of Middle East & Africa 3D stacking market in 2023, amassing US$ 31.97 million. It is anticipated to garner US$ 98.03 million by 2031 to expand at 15.0% CAGR during 2023-2031.

By end user, the Middle East & Africa 3D stacking market is segmented into consumer electronics, telecommunication, automotive, manufacturing, healthcare, and others. The consumer electronics segment held 24.8% share of Middle East & Africa 3D stacking market in 2023, amassing US$ 26.00 million. It is anticipated to garner US$ 82.48 million by 2031 to expand at 15.5% CAGR during 2023-2031.

Based on country, the Middle East & Africa 3D stacking market is categorized into South Africa, the UAE, Saudi Arabia, and the Rest of Middle East & Africa. Our regional analysis states that Saudi Arabia captured 35.8% share of Middle East & Africa 3D stacking market in 2023. It was assessed at US$ 37.57 million in 2023 and is likely to hit US$ 116.87 million by 2031, registering a CAGR of 15.2% during 2023-2031.

Key players operating in the Middle East & Africa 3D stacking market are Samsung Electronics Co Ltd; Intel Corp; MediaTek Inc.; Texas Instruments Inc; Amkor Technology Inc; ASE Technology Holding Co Ltd; Advanced Micro Devices Inc.; 3M Co.; and Globalfoundries Inc, among others.

• In December 2023, Intel researchers showcased advancements in 3D stacked complementary metal oxide semiconductor (CMOS) transistors combined with backside power and direct backside contacts at the 2023 IEEE International Electron Devices Meeting (IEDM). The company also reported on scaling paths for recent R&D breakthroughs for backside power delivery, such as backside contacts, and it was the first to demonstrate successful large-scale 3D monolithic integration of silicon transistors with gallium nitride (GaN) transistors on the same 300-millimeter (mm) wafer, rather than on the package.
  
  

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