At 11.4% CAGR, Europe RF power amplifier Market is Projected to be Worth US$ 3,051.45 Million by 2031, says Business Market Insights

According to Business Market Insights' research, the Europe RF power amplifier market was valued at US$ 1,285.04 million in 2023 and is projected to reach US$ 3,051.45 million by 2031, registering a CAGR of 11.4% from 2023 to 2031. Miniaturization of RF power amplifiers and increased demand in consumer electronics are among the critical factors attributed to drive the Europe RF power amplifier market growth.

The demand for compact and energy-efficient devices in wireless technology applications, advancements in communication engineering such as 5G, and the need for high-quality transmission with enhanced parameters such as efficiency, linearity, and bandwidth have led to the adoption of miniaturized RF power amplifiers. The miniaturization of RF power amplifiers enables their integration into wireless transceivers. This integration is crucial for the development of smaller and more portable devices without affecting the overall performance. By integrating miniaturized RF power amplifiers into transceivers, multiple RF power amplifiers can be equipped with the wireless sensors of each cell, contributing to increased efficiency and performance of wireless communication systems. Miniaturized RF power amplifiers help reduce power consumption and enable the design of compact devices without compromising performance. By reducing the size and improving the design of RF power amplifiers, power consumption can be minimized while maintaining stable output and high efficiency. With the increasing adoption of IoT, wireless sensors, and connected devices, there is a growing requirement for RF power amplifiers that can operate efficiently as well as extend battery life. The miniaturization of RF power amplifiers finds applications in various industries, including telecommunications, broadcasting, aerospace, defense, and healthcare. Thus, the miniaturization of RF power amplifiers is anticipated to present new opportunities for the market players during the forecast period.

On the contrary, high manufacturing costs and complex design hamper the growth of Europe RF power amplifier market.

Based on frequency, the Europe RF power amplifier market is segmented into less than 10 GHz, 11-20 GHz, 21-30 GHz, and above 30 GHz. The less than 10GHz segment held 60.0% market share in 2023, amassing US$ 771.64 million. It is projected to garner US$ 1,895.89 million by 2031 to register 11.9% CAGR during 2023-2031.

In terms of technology, the Europe RF power amplifier market is segmented into galium arsenide (GaAs), galium nitride (GaN), silicon germanium (SiGe), and others. The galium arsenide (GaAs) segment held 50.3% share of Europe RF power amplifier market in 2023, amassing US$ 645.99 million. It is projected to garner US$ 1,451.74 million by 2031 to expand at 10.7% CAGR from 2023 to 2031.

By application, the Europe RF power amplifier market is categorized into consumer electronics, aerospace and defense, automotive, medical, and others. The consumer electronics segment held 42.8% share of Europe RF power amplifier market in 2023, amassing US$ 550.11 million. It is predicted to garner US$ 1,281.98 million by 2031 to expand at 11.2% CAGR between 2023 and 2031.

Based on country, the Europe RF power amplifier market is categorized into Germany, the UK, France, Russia, Italy, and the Rest of Europe. Our regional analysis states that the Rest of Europe captured 25.4% share of Europe RF power amplifier market in 2023. It was assessed at US$ 326.27 million in 2023 and is likely to hit US$ 709.15 million by 2031, registering a CAGR of 10.2% during 2023-2031.

Key players operating in the Europe RF power amplifier market are Qorvo Inc, NXP Semiconductors NV, Qualcomm Inc, Infineon Technologies AG, Broadcom Inc, Mitsubishi Electric Corp, STMicroelectronics NV, Skyworks Solutions Inc, Texas Instruments Inc, and Analog Devices Inc., among others.

• In October 2021, Qualcomm Inc launched new RF filter technology for bands up to 7 GHz by enabling next-generation 5G and Wi-Fi solutions. The company integrated ultraBAW technology to launch a power amplifier module to enable high-power handling with high-frequency support in very small acoustic structures.
• In June 2023, NXP Semiconductors NV announced a family of top-side cooled RF amplifier modules to enable thinner and lighter radios for 5G infrastructure. The top-side cooled RF amplifier modules deliver significant design and manufacturing benefits to the user, including the removal of the dedicated RF shield, the use of a cost-effective and streamlined printed circuit board, and the separation of thermal management from RF design.

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