At 15.4% CAGR, Europe 3D Stacking Market is Projected to be Worth US$ 1,257.70 Million by 2031, says Business Market Insights

According to Business Market Insights' research, the Europe 3D stacking market was valued at US$ 398.61 million in 2023 and is expected to reach US$ 1,257.70 million by 2031, recording a CAGR of 15.4% from 2023 to 2031. Fast processors for gaming purposes and surge in demand for high-bandwidth memory are among the critical factors attributed to drive the Europe 3D stacking market growth.

High-bandwidth memory (HBM), which reaches extremely high density by stacking numerous dynamic random-access memory (DRAMs) vertically, is distinguished by rapid data processing and low power consumption. It is essential in high-performance computing (HPC), such as generative AI, which requires processing enormous amounts of data at significantly fast speeds. Samsung Electronics 12-layer stacked HBM uses next-generation 3D stacking packaging technique to boost performance and yield. With a processing speed of 6.4Gbps and a bandwidth of 819 GB/s, HBM3 is 1.8 times faster than the previous-generation DRAM while using 10% less power. The demand for HBM in high-performance computing applications encourages market players to increase their production. For instance, in March 2024, SK HYNIX INC started volume production of HBM3E1, the newest AI memory product with ultra-high performance. HBM3E is designed for an AI system that processes a huge amount of data quickly. The high-bandwidth memory is used by various industries, including telecommunication, automotive, healthcare, and manufacturing, for high-speed data processing. HBM utilizes 3D stacking technology, allowing the stacking of multiple layers of chips using vertical channels known as through-silicon vias (TSVs). This enables a greater number of memory chips to be packed into a smaller space, minimizing the distance data must travel between the memory and processor. HBM can help lengthen battery life and reduce energy consumption by offering sustainable benefits to users. This supports users in decreasing the amount of power required to transmit data between memory and processor. Therefore, the surge in demand for high-speed data processing and low-power consumption memories is expected to create lucrative opportunities for the 3D stacking market growth during the forecast period.

On the flip side, complexity associated with 3D stacking technology hampers the growth of Europe 3D stacking market.

Based on interconnecting technology, the Europe 3D stacking market is segmented into through-silicon via, monolithic 3D integration, and 3D hybrid bonding. The through-silicon via segment held 46.6% market share in 2023, amassing US$ 185.85 million. It is projected to garner US$ 653.32 million by 2031 to register 17.0% CAGR during 2023-2031.

In terms of device type, the Europe 3D stacking market is segmented into memory devices, mems/sensors, LEDs, imaging & optoelectronics, and others. The memory devices segment held 30.7% share of Europe 3D stacking market in 2023, amassing US$ 122.46 million. It is anticipated to garner US$ 411.46 million by 2031 to expand at 16.4% CAGR during 2023-2031.

By end user, the Europe 3D stacking market is segmented into consumer electronics, telecommunication, automotive, manufacturing, healthcare, and others. The consumer electronics segment held 26.0% share of Europe 3D stacking market in 2023, amassing US$ 103.60 million. It is anticipated to garner US$ 359.41 million by 2031 to expand at 16.8% CAGR during 2023-2031.

Based on country, the Europe 3D stacking market is categorized into the UK, Germany, France, Italy, Russia, and the Rest of Europe. Our regional analysis states that Germany captured 35.0% share of Europe 3D stacking market in 2023. It was assessed at US$ 139.38 million in 2023 and is likely to hit US$ 461.04 million by 2031, registering a CAGR of 16.1% during 2023-2031.

Key players operating in the Europe 3D stacking market are Taiwan Semiconductor Manufacturing Co Ltd; Samsung Electronics Co Ltd; Intel Corp; MediaTek Inc.; Texas Instruments Inc; Amkor Technology Inc; ASE Technology Holding Co Ltd; Advanced Micro Devices Inc.; 3M Co.; and Globalfoundries Inc, among others.

• December 2023, Intel researchers showcased advancements in 3D stacked complementary metal oxide semiconductor (CMOS) transistors combined with backside power and direct backside contacts at the 2023 IEEE International Electron Devices Meeting (IEDM). The company also reported on scaling paths for recent R&D breakthroughs for backside power delivery, such as backside contacts, and it was the first to demonstrate successful large-scale 3D monolithic integration of silicon transistors with gallium nitride (GaN) transistors on the same 300-millimeter (mm) wafer, rather than on the package.
  
  

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