At 16.4% CAGR, Asia Pacific 3D Stacking Market is Projected to be Worth US$ 2,352.45 Million by 2031, says Business Market Insights

According to Business Market Insights' research, the Asia Pacific 3D stacking market was valued at US$ 699.32 million in 2023 and is expected to reach US$ 2,352.45 million by 2031, recording a CAGR of 16.4% from 2023 to 2031. Increasing use of heterogeneous integration & component optimization and surge in demand for high-bandwidth memory are among the critical factors attributed to drive the Asia Pacific 3D stacking market growth.

The increasing use of heterogeneous integration and component optimization to improve the manufacturing of electronic components is a major factor driving the 3D stacking market. This approach allows for the stacking of dies on a substrate, creating chips in packages that are smaller and more energy-efficient. 3D stacking technology allows heterogeneous integration by allowing circuit layers to be created using various methods and wafer types. This tremendous flexibility allows manufacturers to significantly optimize individual components when compared to single-wafer production. This supports manufacturers in designing electrical components that meet specific requirements with precision and customization, which was previously unattainable. Heterogeneous integration and component optimization involve integrating diverse technologies into a composite device, which might include stacking of chips and packages; using multiple semiconductor materials; and employing various electrical routing techniques such as ball grid arrays, through-silicon vias (TSVs), interposers, and wire bonding.

On the flip side, complexity associated with 3D stacking technology hampers the growth of Asia Pacific 3D stacking market.

Based on interconnecting technology, the Asia Pacific 3D stacking market is segmented into through-silicon via, monolithic 3D integration, and 3D hybrid bonding. The through-silicon via segment held 43.8% market share in 2023, amassing US$ 306.29 million. It is projected to garner US$ 1,141.98 million by 2031 to register 17.9% CAGR during 2023-2031.

In terms of device type, the Asia Pacific 3D stacking market is segmented into memory devices, mems/sensors, LED s, imaging & optoelectronics, and others. The memory devices segment held 31.3% share of Asia Pacific 3D stacking market in 2023, amassing US$ 219.06 million. It is anticipated to garner US$ 780.61 million by 2031 to expand at 17.2% CAGR during 2023-2031.

By end user, the Asia Pacific 3D stacking market is segmented into consumer electronics, telecommunication, automotive, manufacturing, healthcare, and others. The consumer electronics segment held 28.8% share of Asia Pacific 3D stacking market in 2023, amassing US$ 201.18 million. It is anticipated to garner US$ 747.51 million by 2031 to expand at 17.8% CAGR during 2023-2031.

Based on country, the Asia Pacific 3D stacking market is categorized into India, China, Japan, South Korea, Taiwan, Australia, and the Rest of Asia Pacific. Our regional analysis states that Taiwan captured 21.1% share of Asia Pacific 3D stacking market in 2023. It was assessed at US$ 147.85 million in 2023 and is likely to hit US$ 521.73 million by 2031, registering a CAGR of 17.1% during 2023-2031.

Key players operating in the Asia Pacific 3D stacking market are Taiwan Semiconductor Manufacturing Co Ltd; Samsung Electronics Co Ltd; Intel Corp; MediaTek Inc.; Texas Instruments Inc; Amkor Technology Inc; ASE Technology Holding Co Ltd; Advanced Micro Devices Inc.; 3M Co.; and Globalfoundries Inc, among others.

• December 2023, Intel researchers showcased advancements in 3D stacked complementary metal oxide semiconductor (CMOS) transistors combined with backside power and direct backside contacts at the 2023 IEEE International Electron Devices Meeting (IEDM). The company also reported on scaling paths for recent R&D breakthroughs for backside power delivery, such as backside contacts, and it was the first to demonstrate successful large-scale 3D monolithic integration of silicon transistors with gallium nitride (GaN) transistors on the same 300-millimeter (mm) wafer, rather than on the package.
  
  

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